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| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DXG2MH50A-50N* | LGA 6mm×10mm | 4700~5000 | 50 | 38.8 | 40.5 | 28.0 | Released Product |
DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2496 | MHz |
Frequency (Max.) | 2690 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 49.9 | dBm |
Power Gain @ 2600 MHz | 15.9 | dB |
Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
